Test structure for ILD void testing and contact resistance measurement in a semiconductor device

In complex semiconductor devices, the contact characteristics may be efficiently determined on the basis of a test structure which includes a combination of interconnect chain structures and a comb structure including gate electrode structures. Consequently, an increased amount of measurement information may be obtained on the basis of a reduced overall floor space of the test structure. In this manner, the complex manufacturing sequence for forming a contact level of a semiconductor device may be quantitatively estimated and monitored.