Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic laye...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TERRIS BRUCE DAVID, SUN JONATHAN ZANHONG, SLONCZEWSKI JOHN CASIMIR, ALLENSPACH ROLF, PARKIN STUART STEPHEN PAPWORTH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
STATIC STORES
TRANSFORMERS
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Beschreibung
Zusammenfassung:A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.