Systems and methods employing a physically asymmetric semiconductor device having symmetrical electrical behavior

An integrated circuit device comprising a first elongate structure and a second elongate structure arranged parallel to each other and defining a space therebetween. The integrated circuit device also includes conductive structures distributed in the space between the first and second elongate struc...

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Bibliographische Detailangaben
Hauptverfasser: YANG HAINING, HAN BEOM-MO, GAN CHOCK H, WANG ZHONGZE
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An integrated circuit device comprising a first elongate structure and a second elongate structure arranged parallel to each other and defining a space therebetween. The integrated circuit device also includes conductive structures distributed in the space between the first and second elongate structures. At least a first one of the conductive structures is placed closer to the first elongate structure than to the second elongate structure. At least a second one of the conductive structures is placed closer to the second elongate structure than to the first elongate structure.