Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture

A method of forming a semiconductor structure includes forming a resistor on an insulator layer over a substrate, and forming at least one dielectric layer over the resistor. The method also includes forming a substrate contact through the at least one dielectric layer, through the resistor, through...

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Bibliographische Detailangaben
Hauptverfasser: ROBISON ROBERT R, SULLIVAN TIMOTHY D, LUKAITIS JOSEPH M, SLISHER DUSTIN K, RANKIN JED H
Format: Patent
Sprache:eng
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Zusammenfassung:A method of forming a semiconductor structure includes forming a resistor on an insulator layer over a substrate, and forming at least one dielectric layer over the resistor. The method also includes forming a substrate contact through the at least one dielectric layer, through the resistor, through the insulator layer, and into the substrate. The substrate contact comprises a high thermal conductivity material.