Memory device, memory system and microcontroller including memory device, and memory control device

A memory device includes: a plurality of word lines and bit lines specifying addresses to be accessed; and a plurality of memory cells of consecutive addresses arranged to correspond to each of the word lines. The plurality of memory cells of the consecutive addresses are accessible in parallel by the plurality of bit lines each corresponding to one of the memory cells. Among the plurality of word lines, a first word line and a second word line that specifies an address next to that of the first word line have an overlapping address range, and a first memory cell connected to the first word line and a second memory cell connected to the second word line are assigned in dual fashion to a same address.