Semiconductor device and method using a sacrificial layer

A method of manufacturing a semiconductor device is disclosed. The method includes forming a first conductive layer over a substrate. The first conductive layer has a top surface and sidewalls, wherein the first conductive layer comprises an overhang of a non-conductive material along the sidewalls. The method further includes forming an insulating layer on the first conductive layer, and forming a sacrificial layer over the insulating layer and the overhang of the first conductive layer. The sacrificial layer is partially removed wherein a residue of the sacrificial layer remains beneath the overhang, and a second conductive layer is formed on the insulating layer.