Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron

A plasma-enhanced physical vapor deposition method in which VHF power is applied to the sputter target in addition to a D.C. voltage that is also applied to the target, the VHF power level being 3.5 kW or greater, so that the D.C. target power may be reduced to less than 500 W while still attaining...

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Bibliographische Detailangaben
Hauptverfasser:	MEHTA VINEET, BROWN KARL M, PIPITONE JOHN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS CONVERSION OR DISTRIBUTION OF ELECTRIC POWER DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS GENERATION INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINEDOPTICAL AND ELECTRIC CABLES OR LINES INSULATORS MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A plasma-enhanced physical vapor deposition method in which VHF power is applied to the sputter target in addition to a D.C. voltage that is also applied to the target, the VHF power level being 3.5 kW or greater, so that the D.C. target power may be reduced to less than 500 W while still attaining a very high ion fraction (in excess of 50%), permitting a very small workpiece-to-target spacing not exceeding a fraction (7/30) of the workpiece diameter to enhance the ionization fraction throughout the process region.