RRAM with improved resistance transformation characteristic and method of making the same

RRAM with improved resistance transformation characteristic and method of making the same

A method for fabricating an RRAM is provided. First, a bottom electrode is formed. A resistive layer is formed on the bottom electrode. A top electrode is then formed on the resistive layer, wherein the top electrode is selected from the group consisting of indium tin oxide (ITO) and indium zinc oxi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HSIEH CHUN-I, SHIH NENG-TAI, WU CHANG-RONG, LIU KOUN
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method for fabricating an RRAM is provided. First, a bottom electrode is formed. A resistive layer is formed on the bottom electrode. A top electrode is then formed on the resistive layer, wherein the top electrode is selected from the group consisting of indium tin oxide (ITO) and indium zinc oxide (IZO). Finally, the top electrode is irradiated with UV light.