System and method for monitoring chloride content and concentration induced by a metal etch process

A system and method for monitoring chloride content and concentration induced by a metal etch process is disclosed. A blank metal film is deposited on a semiconductor wafer. A metal etch process is then applied to partially etch the blank metal film on the wafer. The metal etch process exposes the metal film to chlorine. The wafer is then scanned using surface profiling total X-ray reflection fluorescence. A chlorine concentration map is generated that shows quantitative and spatial information about the chlorine on the wafer. Information from the chlorine concentration map is then used to select a value of chlorine concentration for a metal etch process that will not create metal chloride corrosion on a semiconductor wafer.