Method and apparatus for reducing plasma process induced damage in integrated circuits

Method and apparatus for reducing plasma process induced damage in integrated circuits

An insulating material interposed between two conductive materials can experience plasma process induced damage (PPID) when a plasma process is used to deposit a dielectric onto one of the conductive materials. This PPID can be reduced by reducing electric charge accumulation on the one conductive m...

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Bibliographische Detailangaben
Hauptverfasser: BRISBIN DOUGLAS, O'CONNELL DENIS FINBARR, DRIZLIKH SERGEI, MCCULLOH HEATHER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An insulating material interposed between two conductive materials can experience plasma process induced damage (PPID) when a plasma process is used to deposit a dielectric onto one of the conductive materials. This PPID can be reduced by reducing electric charge accumulation on the one conductive material during the plasma process dielectric deposition.