Power domain controller with gated through silicon via having FET with horizontal channel

A semiconductor chip has a gated through silicon via (TSVG). The TSVG may be switched so that the TSVG can be made conducting or non-conducting. The semiconductor chip may be used between a lower level semiconductor chip and a higher semiconductor chip to control whether a voltage supply on the lowe...

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Hauptverfasser:	SHEETS, II JOHN E, GERMANN PHILIP R, MAKI ANDREW B, BECKER DARRYL J, BARTLEY GERALD K
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	SHEETS, II JOHN E GERMANN PHILIP R MAKI ANDREW B BECKER DARRYL J BARTLEY GERALD K
description	A semiconductor chip has a gated through silicon via (TSVG). The TSVG may be switched so that the TSVG can be made conducting or non-conducting. The semiconductor chip may be used between a lower level semiconductor chip and a higher semiconductor chip to control whether a voltage supply on the lower level semiconductor chip is connected to or disconnected from a voltage domain in the upper level semiconductor chip. The TSVG comprises an FET controlled by the lower level chip as a switch.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Power domain controller with gated through silicon via having FET with horizontal channel
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