Power domain controller with gated through silicon via having FET with horizontal channel

Power domain controller with gated through silicon via having FET with horizontal channel

A semiconductor chip has a gated through silicon via (TSVG). The TSVG may be switched so that the TSVG can be made conducting or non-conducting. The semiconductor chip may be used between a lower level semiconductor chip and a higher semiconductor chip to control whether a voltage supply on the lowe...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHEETS, II JOHN E, GERMANN PHILIP R, MAKI ANDREW B, BECKER DARRYL J, BARTLEY GERALD K
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor chip has a gated through silicon via (TSVG). The TSVG may be switched so that the TSVG can be made conducting or non-conducting. The semiconductor chip may be used between a lower level semiconductor chip and a higher semiconductor chip to control whether a voltage supply on the lower level semiconductor chip is connected to or disconnected from a voltage domain in the upper level semiconductor chip. The TSVG comprises an FET controlled by the lower level chip as a switch.