Insulated gate semiconductor device with well region edge positioned within ring-shaped buffer trench

An insulated gate semiconductor device includes a semiconductor substrate, a drift layer on the substrate, a base layer on the drift layer, a ring-shaped gate trench dividing the base layer into a channel layer and a floating layer, an emitter region located in the channel layer to be in contact wit...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOUNO KENJI, TSUZUKI YUKIO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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