Semiconductor device having three-dimensional transistor and manufacturing method thereof

A semiconductor device includes a silicon pillar formed substantially perpendicular to a principal surface of a silicon substrate, a first impurity diffusion layer and a second impurity diffusion layer arranged below and above the silicon pillar, respectively, a gate electrode arranged to penetrate through the silicon pillar in a horizontal direction, a gate dielectric film arranged between the gate electrode and the silicon pillar, a back-gate electrode arranged adjacent to the silicon pillar, and a back-gate dielectric film arranged between the back-gate electrode and the silicon pillar.