Methods of forming copper wiring and copper film, and film forming system

A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD whil...

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Bibliographische Detailangaben
Hauptverfasser:	TOSHIMA HIROYUKI, HATANO TATSUO, YASUMURO CHIAKI, KATO TAKARA, SAKUMA TAKASHI, MIZUSAWA YASUSHI, HARA MASAMICHI, GOMI ATSUSHI, YOKOYAMA OSAMU, ISHIZAKA TADAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.