Methods of forming radiation-hardened semiconductor structures
A radiation-hardened semiconductor structure including an insulator material doped with at least one of a transition metal, a lanthanide, and an actinide, and a semiconductor material located over the insulator material. A semiconductor device including the radiation-hardened semiconductor structure...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A radiation-hardened semiconductor structure including an insulator material doped with at least one of a transition metal, a lanthanide, and an actinide, and a semiconductor material located over the insulator material. A semiconductor device including the radiation-hardened semiconductor structure is also disclosed, as are methods of forming the radiation-hardened semiconductor structure and the semiconductor device. |
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