Two beam backside laser dicing of semiconductor films

A method and system for dicing semiconductor devices from a semiconductor film. A semiconductor film, backed by a metal layer, is bonded by an adhesive layer to a flexible translucent substrate. Reference features on the film are used to describe a cutting path like a scribe line. An infrared laser beam is aligned to the scribe lines from the back surface of the flexible substrate. The infrared laser beam cuts through the flexible substrate and the majority of the thickness of the adhesive layer, cutting a first trough of a backside street along a scribe line defined by the reference features. An ultraviolet laser beam is aligned to the backside street, or to the scribe line as mapped to the back surface of the flexible substrate. The ultraviolet laser cuts through the metal layer and the semiconductor film, cutting a second trough along the scribe line. The second trough extends from the bottom of and deepens the first trough, cutting through the semiconductor film.