Junction field effect transistor

Junction field effect transistor

A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.

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Bibliographische Detailangaben
Hauptverfasser: STENSON BERNARD PATRICK, BOWERS DEREK FREDERICK, DEIGNAN ANNE MARIA, BAIN ANDREW DAVID, DUNBAR MICHAEL THOMAS, DALY PAUL MALACHY, LANE WILLIAM ALLAN, MCGUINNESS PATRICK MARTIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.