Neutron porosity measurement devices with semiconductor neutron detection cells and methods

A neutron porosity measurement device adapted to receive a neutron source configured to emit neutrons having a first energy includes a segmented semiconductor detector located at a predetermined distance from the neutron source. The segmented semiconductor detector includes a plurality of semiconductor neutron detection cells configured to detect neutrons having a second energy smaller than the first energy. The cells are arranged in subsets located between a first distance and a second distance from the neutron source, each subset including semiconductor neutron detection cells surrounding an axis and being disposed in opposite sectors defined relative to the axis at substantially same distance from the neutron source. One or more of the neutron detection cells are configured to acquire data related to detected neutrons independently from one or more other of the neutron detected cells. A method of manufacturing the neutron porosity measurement device is also provided.