Self-heating phase change memory cell architecture

A method for manufacturing a phase change memory includes forming a phase change memory cell by forming a phase change layer between two switching layers. The phase change layer is separated from thermal heat sinks, such as the bitline or wordline, by the switching layers.

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Bibliographische Detailangaben
Hauptverfasser: KARPOV ILYA, SAVRANSKY SEMYON D
Format: Patent
Sprache:eng
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Zusammenfassung:A method for manufacturing a phase change memory includes forming a phase change memory cell by forming a phase change layer between two switching layers. The phase change layer is separated from thermal heat sinks, such as the bitline or wordline, by the switching layers.