Methods for forming thin films comprising tellurium

Methods for controllably forming Sb-Te, Ge-Te, and Ge-Sb-Te thin films are provided. ALD processes can be used to deposit a first film comprising ZnTe. Providing an antimony source chemical, such as SbI3 replaces the zinc, thereby forming Sb2Te3 thin films. Ge-Te and Ge-Sb-Te films can also be made...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	RITALA MIKKO, LESKELAE MARKKU, HATANPAEAE TIMO, PORE VILJAMI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Methods for controllably forming Sb-Te, Ge-Te, and Ge-Sb-Te thin films are provided. ALD processes can be used to deposit a first film comprising ZnTe. Providing an antimony source chemical, such as SbI3 replaces the zinc, thereby forming Sb2Te3 thin films. Ge-Te and Ge-Sb-Te films can also be made by providing Ge sources to ZnTe and Sb-Te thin films, respectively.