Adaptive endpoint method for pad life effect on chemical mechanical polishing

The present disclosure provides a semiconductor manufacturing method. The method includes defining a plurality of time regions of pad life for a polishing pad in a chemical mechanical polishing (CMP) system; assigning a ladder coefficient to the polishing pad according to the plurality of time regio...

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Bibliographische Detailangaben
Hauptverfasser:	HUANG HUII, JANGJIAN PENGUNG, LEE CHU-AN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CONTROL OR REGULATING SYSTEMS IN GENERAL CONTROLLING DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS FUNCTIONAL ELEMENTS OF SUCH SYSTEMS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS PERFORMING OPERATIONS PHYSICS POLISHING REGULATING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present disclosure provides a semiconductor manufacturing method. The method includes defining a plurality of time regions of pad life for a polishing pad in a chemical mechanical polishing (CMP) system; assigning a ladder coefficient to the polishing pad according to the plurality of time regions of pad life; defining a plurality of endpoint windows to the plurality of time regions, respectively, according to pad life effect; applying a CMP process to a wafer positioned on the polishing pad; determining a time region of a polishing signal of the wafer based on the ladder coefficient; associating one of the endpoint windows to the polishing signal according to the time region; and ending the CMP process at an endpoint determined by the endpoint window.