Bipolar transistor

A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

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Bibliographische Detailangaben
Hauptverfasser:	STENSON BERNARD PATRICK, BOWERS DEREK FREDERICK, DEIGNAN ANNE MARIA, BAIN ANDREW DAVID, DUNBAR MICHAEL THOMAS, DALY PAUL MALACHY, LANE WILLIAM ALLAN, MCGUINNESS PATRICK MARTIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.