Method for fabricating a structure for a semiconductor device using a halogen based precursor

Method for fabricating a structure for a semiconductor device using a halogen based precursor

There is described a method of fabricating a dual damascene structure for a semiconductor device. A halogen based pre-cursor is used during vapor deposition of a diffusion barrier layer in a trench or via formed in a substrate. Residual halogen from the deposition is allowed to remain on the barrier...

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Bibliographische Detailangaben
1. Verfasser: BESLING WIM
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:There is described a method of fabricating a dual damascene structure for a semiconductor device. A halogen based pre-cursor is used during vapor deposition of a diffusion barrier layer in a trench or via formed in a substrate. Residual halogen from the deposition is allowed to remain on the barrier layer and is used to catalyse growth of a metal layer on the barrier layer to fill the trench or via.