Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process

Method of determining defects in a substrate, the method comprising: scanning a scan range of the substrate with a sensor, the sensor projecting a beam of radiation on the substrate; measuring the fraction of the intensity of the radiation reflected from different substrate areas along the scan rang...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SAHA NILAY, PEN HERMEN FOLKEN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Method of determining defects in a substrate, the method comprising: scanning a scan range of the substrate with a sensor, the sensor projecting a beam of radiation on the substrate; measuring the fraction of the intensity of the radiation reflected from different substrate areas along the scan range; determining the variations of the measured fraction across the scan range; determining from the variations whether any defects are present in the substrate.