Power semiconductor device and manufacturing method therefor
A power semiconductor device includes a substrate, an element circuit pattern formed on the substrate and made of Cu covered with an electroless Ni-P plating layer, and a power semiconductor element bonded to the element circuit pattern by a solder, wherein the solder is an alloy of Sn, Sb, and Cu,...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A power semiconductor device includes a substrate, an element circuit pattern formed on the substrate and made of Cu covered with an electroless Ni-P plating layer, and a power semiconductor element bonded to the element circuit pattern by a solder, wherein the solder is an alloy of Sn, Sb, and Cu, and the weight percent of Cu is in the range of 0.5 to 1%, inclusive. |
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