Through-gate implant for body dopant

The present invention, provides a semiconductor device including a substrate including a semiconductor layer overlying an insulating layer, wherein a back gate structure is present underlying the insulating layer and a front gate structure on the semiconductor layer; a channel dopant region underlying the front gate structure of the substrate, wherein the channel dopant region has a first concentration present at an interface of the semiconductor layer and the insulating layer and at least a second concentration present at the interface of the front gate structure and the semiconductor layer, wherein the first concentration is greater than the second concentration; and a source region and drain region present in the semiconductor layer of the substrate.