Methods of forming a bipolar transistor

Methods of forming a bipolar transistor

A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: STENSON BERNARD PATRICK, BOWERS DEREK FREDERICK, DEIGNAN ANNE MARIA, BAIN ANDREW DAVID, DUNBAR MICHAEL THOMAS, DALY PAUL MALACHY, MCGUINESS PATRICK MARTIN, LANE WILLIAM ALLAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.