Lithium niobate wafers with narrow distribution of surface acoustic wave properties

A method is provided of growing crystals from compounds that melt congruently with negligible volatilization. The composition of one or more crystal samples is measured. A determination is made of a deviation of crystal composition from congruency. A determination is made of an initial melt composit...

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Bibliographische Detailangaben
Hauptverfasser:	KAJIYAMA MARIA CLAUDIA CUSTODIO, CARELLA JOHN THOMAS, JUNDT DIETER HANS
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method is provided of growing crystals from compounds that melt congruently with negligible volatilization. The composition of one or more crystal samples is measured. A determination is made of a deviation of crystal composition from congruency. A determination is made of an initial melt composition and a source material composition correction relative to the deviation. Crystals are grown using the composition correction to yield reproducible material for surface acoustic substrate manufacturing.