Method of determining main deflection settling time for charged particle beam writing, method of writing with charged particle beam, and apparatus for writing with charged particle beam

An electron beam is moved a long distance along a straight line from a sub-deflection region 101a to a diagonally opposite sub-deflection region 123w by main deflection of the beam, and a pattern P is written in the sub-deflection region 123w. The former writing step is repeated a plurality of times...

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1. Verfasser: NISHIMURA REIKO
Format: Patent
Sprache:eng
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Zusammenfassung:An electron beam is moved a long distance along a straight line from a sub-deflection region 101a to a diagonally opposite sub-deflection region 123w by main deflection of the beam, and a pattern P is written in the sub-deflection region 123w. The former writing step is repeated a plurality of times each with a different main deflection settling time, thereby writing a plurality of patterns P. The amount of displacement of each pattern P from its designed position is then measured. Further, the latter writing step is also repeated a plurality of times each with a different main deflection settling time, thereby writing another plurality of patterns P. The amount of displacement of each pattern P from its designed position is then measured.