Polycrystalline semiconductor layers and methods for forming the same

A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing there...

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Hauptverfasser:	LEITZ CHRISTOPHER, RAFFAELLE RYNE P, FRITZEMEIER LESLIE G
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	LEITZ CHRISTOPHER RAFFAELLE RYNE P FRITZEMEIER LESLIE G
description	A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing therebetween. A polycrystalline semiconductor layer is disposed over the buffer layer.
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title	Polycrystalline semiconductor layers and methods for forming the same
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