Polycrystalline semiconductor layers and methods for forming the same

A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing there...

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Bibliographische Detailangaben
Hauptverfasser: LEITZ CHRISTOPHER, RAFFAELLE RYNE P, FRITZEMEIER LESLIE G
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing therebetween. A polycrystalline semiconductor layer is disposed over the buffer layer.