Semiconductor device and manufacturing method of semiconductor device
A semiconductor device includes a semiconductor substrate in which a first trench is formed and a second trench is formed at the middle portions of the first trench; and a first ion implantation layer that is formed on the surface of the semiconductor substrate and on the bottom of the first trench,...
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| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device includes a semiconductor substrate in which a first trench is formed and a second trench is formed at the middle portions of the first trench; and a first ion implantation layer that is formed on the surface of the semiconductor substrate and on the bottom of the first trench, the portions formed on the bottom of the first trench being spaced from each other by the second trench. A gate is formed from the bottom of the both side walls of the first trench to the middle portions thereof; a drift region is formed at both side walls of the first trench over the second trench; and a second ion implantation layer formed on the inner surface of the second trench. |
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