Precise metrology with adaptive milling
A method of measuring a three-dimensional device in a wafer is provided. The method comprises the step of forming a trench in the wafer. The trench has a facet passing through the three-dimensional device a predetermined offset from a desired image position. The method further comprises iteratively,...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of measuring a three-dimensional device in a wafer is provided. The method comprises the step of forming a trench in the wafer. The trench has a facet passing through the three-dimensional device a predetermined offset from a desired image position. The method further comprises iteratively, until a remaining distance between the facet and the desired image position is less than a predetermined threshold, adjusting one or more parameters of a polishing beam based on the remaining distance, polishing the facet with the polishing beam to position the facet closer to the desired image position, and measuring the remaining distance. |
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