Modification of charge trap silicon nitride with oxygen plasma

Modification of charge trap silicon nitride with oxygen plasma

A flash memory device comprises a substrate comprising silicon with a silicon dioxide layer thereon. A silicon-oxygen-nitrogen layer is on the silicon dioxide layer, and the silicon-oxygen-nitrogen layer comprises a shaped concentration level profile of oxygen through the thickness of the layer. A b...

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Bibliographische Detailangaben
Hauptverfasser: POON TZE WING, GANGULY UDAYAN, SWENBERG JOHANES, OLSEN CHRISTOPHER SEAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A flash memory device comprises a substrate comprising silicon with a silicon dioxide layer thereon. A silicon-oxygen-nitrogen layer is on the silicon dioxide layer, and the silicon-oxygen-nitrogen layer comprises a shaped concentration level profile of oxygen through the thickness of the layer. A blocking dielectric layer is on the silicon-oxygen-nitrogen layer, and a gate electrode is on the blocking dielectric layer. Oxygen ions can be implanted into a silicon nitride layer to form the silicon-oxygen-nitrogen layer.