Integrated circuit structure with electrical strap and its method of forming

Integrated circuit structure with electrical strap and its method of forming

A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate sta...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YU XIONGFEI, CHIA GARY, LI CHAO YONG, LEI MING, LEONG CHEE KONG, CHIAH SIAU BEN, GUAN KELVIN TIANPENG, XIAO HUA, CHENG CHOR SHU, CHIA PUAY SAN, YANG LIEYONG, LIAN SEAN, PEY KIN SAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate stack of a first transistor to provide a continuous electrical flowpath over a gate electrode of the first transistor and the source or drain region of a second transistor.