Stress sensor for in-situ measurement of package-induced stress in semiconductor devices

Stress sensor for in-situ measurement of package-induced stress in semiconductor devices

A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.

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Bibliographische Detailangaben
Hauptverfasser: PATEL NEHA M, FARAHANI MOHAMMAD M, NOVESKI VLADIMIR, RARAVIKAR NACHIKET R
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.