Structure and method to improve threshold voltage of MOSFETS including a high K dielectric

Structure and method to improve threshold voltage of MOSFETS including a high K dielectric

A method of forming threshold voltage controlled semiconductor structures is provided in which a conformal nitride-containing liner is formed on at least exposed sidewalls of a patterned gate dielectric material having a dielectric constant of greater than silicon oxide. The conformal nitride-contai...

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Bibliographische Detailangaben
Hauptverfasser: LEOBANDUNG EFFENDI, LIANG QINGQING, WANG YANFENG, MACIEJEWSKI EDWARD P, GREENE BRIAN J, FANG SUNFEI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method of forming threshold voltage controlled semiconductor structures is provided in which a conformal nitride-containing liner is formed on at least exposed sidewalls of a patterned gate dielectric material having a dielectric constant of greater than silicon oxide. The conformal nitride-containing liner is a thin layer that is formed using a low temperature (less than 500° C.) nitridation process.