Yttria sintered body and component used for plasma processing apparatus

To provide a high purity Yttria sintered bodies having a high strength, a low dielectric loss and high plasma corrosion resistance of halogen gas during wide range surface roughness (Ra). An Yttria sintered body having a dielectric loss tan δ of 1×10−4 or less in the frequency range from 1 to 20 GHz, wherein the Yttria sintered body contains Yttria of 99.9% by mass or more, has a porosity of 1% or less and an average crystal grain size of 3 μm or less, and the cumulative frequency ratio calculated from the following formula (1) is 3 or less: Cumulative frequency ratio=D90/D50. In the above-described formula (1), the meanings of the individual symbols are as follows: D90: The crystal grain size (μm) at which the cumulative number of grains as calculated from the smaller grain size side is 90% in the grain size distribution of the crystal grains in terms of the number of grains. D50: The crystal grain size (μm) at which the cumulative number of grains as calculated from the smaller grain size side is 50% in the grain size distribution of the crystal grains in terms of the number of grains.