Method of forming a metal layer and a method of fabricating a semiconductor device
A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on t...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | CHOI GIL-HEYUN JUNG EUN-JI KIM BYUNG-HEE SOHN WOONG-HEE KIM SU-KYOUNG |
| description | A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on the insulating layer and the metal layer, wherein the second metal capping layer has different thicknesses on the insulating layer and the metal layer. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8119526B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8119526B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8119526B23</originalsourceid><addsrcrecordid>eNrjZAjyTS3JyE9RyE9TSMsvys3MS1dIVMhNLUnMUchJrEwtUkjMS4GIwFQlJhVlJieWQFQWp-ZmJufnpZQml-QXKaSklmUmp_IwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYAtDQ0tTIzMnI2MilAAAOsg3GA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of forming a metal layer and a method of fabricating a semiconductor device</title><source>esp@cenet</source><creator>CHOI GIL-HEYUN ; JUNG EUN-JI ; KIM BYUNG-HEE ; SOHN WOONG-HEE ; KIM SU-KYOUNG</creator><creatorcontrib>CHOI GIL-HEYUN ; JUNG EUN-JI ; KIM BYUNG-HEE ; SOHN WOONG-HEE ; KIM SU-KYOUNG</creatorcontrib><description>A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on the insulating layer and the metal layer, wherein the second metal capping layer has different thicknesses on the insulating layer and the metal layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120221&DB=EPODOC&CC=US&NR=8119526B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120221&DB=EPODOC&CC=US&NR=8119526B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHOI GIL-HEYUN</creatorcontrib><creatorcontrib>JUNG EUN-JI</creatorcontrib><creatorcontrib>KIM BYUNG-HEE</creatorcontrib><creatorcontrib>SOHN WOONG-HEE</creatorcontrib><creatorcontrib>KIM SU-KYOUNG</creatorcontrib><title>Method of forming a metal layer and a method of fabricating a semiconductor device</title><description>A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on the insulating layer and the metal layer, wherein the second metal capping layer has different thicknesses on the insulating layer and the metal layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAjyTS3JyE9RyE9TSMsvys3MS1dIVMhNLUnMUchJrEwtUkjMS4GIwFQlJhVlJieWQFQWp-ZmJufnpZQml-QXKaSklmUmp_IwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYAtDQ0tTIzMnI2MilAAAOsg3GA</recordid><startdate>20120221</startdate><enddate>20120221</enddate><creator>CHOI GIL-HEYUN</creator><creator>JUNG EUN-JI</creator><creator>KIM BYUNG-HEE</creator><creator>SOHN WOONG-HEE</creator><creator>KIM SU-KYOUNG</creator><scope>EVB</scope></search><sort><creationdate>20120221</creationdate><title>Method of forming a metal layer and a method of fabricating a semiconductor device</title><author>CHOI GIL-HEYUN ; JUNG EUN-JI ; KIM BYUNG-HEE ; SOHN WOONG-HEE ; KIM SU-KYOUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8119526B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHOI GIL-HEYUN</creatorcontrib><creatorcontrib>JUNG EUN-JI</creatorcontrib><creatorcontrib>KIM BYUNG-HEE</creatorcontrib><creatorcontrib>SOHN WOONG-HEE</creatorcontrib><creatorcontrib>KIM SU-KYOUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHOI GIL-HEYUN</au><au>JUNG EUN-JI</au><au>KIM BYUNG-HEE</au><au>SOHN WOONG-HEE</au><au>KIM SU-KYOUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of forming a metal layer and a method of fabricating a semiconductor device</title><date>2012-02-21</date><risdate>2012</risdate><abstract>A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on the insulating layer and the metal layer, wherein the second metal capping layer has different thicknesses on the insulating layer and the metal layer.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US8119526B2 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method of forming a metal layer and a method of fabricating a semiconductor device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T05%3A45%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHOI%20GIL-HEYUN&rft.date=2012-02-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8119526B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |