Integration of passive device structures with metal gate layers

A passive device structure includes an unpatterned metal gate layer formed in a passive device region of a semiconductor device; an insulator layer formed upon the unpatterned metal gate layer; a semiconductor layer formed upon the insulator layer; and one or more metal contact regions formed in the...

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Bibliographische Detailangaben
Hauptverfasser: GUO DECHAO, CHAKRAVARTI SATYA N, WONG KEITH KWONG HON, BU HUIMING
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A passive device structure includes an unpatterned metal gate layer formed in a passive device region of a semiconductor device; an insulator layer formed upon the unpatterned metal gate layer; a semiconductor layer formed upon the insulator layer; and one or more metal contact regions formed in the semiconductor layer; wherein the insulator layer prevents the metal gate layer as serving as a leakage current path for current flowing through a passive device defined by the semiconductor layer and the one or more metal contact regions.