Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device

In one embodiment, the invention is a method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device. One embodiment of a method for fabricating a complementary metal-oxide-semiconductor device includes fabricating an n-type metal-oxide-semiconductor...

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Bibliographische Detailangaben
Hauptverfasser:	CHOI CHANGHWAN, ANDO TAKASHI, CARTIER EDUARD A, DORIS BRUCE B, NARAYANAN VIJAY, PAN JAMES, PARUCHURI VAMSI K, DUCH ELIZABETH A, KIM YOUNG-HEE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In one embodiment, the invention is a method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device. One embodiment of a method for fabricating a complementary metal-oxide-semiconductor device includes fabricating an n-type metal-oxide-semiconductor device using a gate first process, and fabricating a p-type metal-oxide-semiconductor device using a gate last process.