IC interconnect for high current

An IC interconnect according to one embodiment includes a first via positioned in a dielectric and coupled to a high current device at one end; a buffer metal segment positioned in a dielectric and coupled to a top portion of the first via; and a plurality of second vias positioned in a dielectric a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: XIU KAI, WATSON KIMBALL M, WANG PINGUAN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An IC interconnect according to one embodiment includes a first via positioned in a dielectric and coupled to a high current device at one end; a buffer metal segment positioned in a dielectric and coupled to a top portion of the first via; and a plurality of second vias positioned in a dielectric and coupled to the buffer metal segment at a bottom end and to a metal power line at a top end thereof, wherein the first via is coupled to a first end of the buffer metal segment and the plurality of second vias are coupled to a second end of the buffer metal segment, such that the first via is horizontally off-set from all of the plurality of second vias, wherein the butter metal segment is substantially shorter in length than the metal power line.