Semiconductor memory device having faulty cells

In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The control...

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Bibliographische Detailangaben
Hauptverfasser: KATAYAMA KUNIHIRO, WATATANI SATOSHI, SHIOTA SHIGEMASA, NAITO MASASHI, INOUE KIYOSHI, TAMURA TAKAYUKI
Format: Patent
Sprache:eng
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Zusammenfassung:In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.