Semiconductor device using a plurality of high-potential-side reference voltages

A plurality of third fixed potential lines are wired in parallel. A group of high-potential-side fixed potential lines containing a first fixed potential line and a second fixed potential line are wired in a plurality at predetermined intervals in a direction perpendicular to the third fixed potential line. In a layout region, surrounded by a pair of adjacent third fixed potential lines and a pair of groups of adjacent high-potential-side fixed potential lines, where a first element or a second element is arranged, either one of the first fixed potential line and the second fixed potential line is wired between the pair of third fixed potential lines. In a layout region used for second elements, a second fixed potential line connecting a pair of second fixed potential lines contained respectively in a pair of groups of high-potential-side fixed potential lines that form the layout region is wired between a pair of third fixed potential lines that form the layout region.