Atomic layer removal process with higher etch amount

Atomic layer removal process with higher etch amount

Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially "reset...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MEINHOLD HENNER, DRAEGER NERISSA, TE NIJENHUIS HARALD, VAN SCHRAVENDIJK BART, NITTALA LAKSHMI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially "reset." A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.