Voltage island performance/leakage screen monitor for IP characterization

Voltage island performance/leakage screen monitor for IP characterization

A method is provided for characterizing performance of a chip having at least one voltage island and at least one performance screen ring oscillator (PSRO). An on-chip performance monitor (OCPM) is incorporated on the voltage island. Performance measurements of the voltage island are generated with...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: STASIAK DANIEL L, LICHTENSTEIGER SUSAN K, WACHNIK RICHARD A, HABIB NAZMUL, BALCH BRUCE
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Beschreibung
Zusammenfassung:A method is provided for characterizing performance of a chip having at least one voltage island and at least one performance screen ring oscillator (PSRO). An on-chip performance monitor (OCPM) is incorporated on the voltage island. Performance measurements of the voltage island are generated with only the voltage island under power. Performance measurements of the performance screen ring oscillator (PSRO) are generated with only the voltage island under power. Performance measurements of the performance screen ring oscillator (PSRO) is compared to the performance measurements of the on-chip performance monitor (OCPM) to determine a systematic offset due to the voltage island. Performance models are adjusted using the systematic offset due to the voltage island.