P-contact layer for a III-P semiconductor light emitting device

P-contact layer for a III-P semiconductor light emitting device

A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1−x p-contact layer, wherein x

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Bibliographische Detailangaben
Hauptverfasser: CHUNG THEODORE, MUNKHOLM ANNELI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1−x p-contact layer, wherein x