Programmable resistance memory

Programmable resistance memory

A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.

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Hauptverfasser: FOURNIER JEFF, LOWREY TYLER, SPALL ED, HENNESSEY MIKE, HUDGENS STEVE, SCHELL CARL, CZUBATYJ WALLY, MAIMON JON
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator FOURNIER JEFF
LOWREY TYLER
SPALL ED
HENNESSEY MIKE
HUDGENS STEVE
SCHELL CARL
CZUBATYJ WALLY
MAIMON JON
description A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
format Patent
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title Programmable resistance memory
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