Self-aligned process for nanotube/nanowire FETs

A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AVOURIS PHAEDON, DETAVERNIER CHRISTOPHER G. M. M, LAVOIE CHRISTIAN, WONG HON-SUM PHILIP, CHEN JIA, CARRUTHERS ROY A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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